Effects of magnetic field on the physical properties in bilayer graphene | apinyan
Summary :
We consider the effects of the external static magnetic field on the electronic and physical properties in the excitonic AA-stacked bilayer graphene. We have considered the effect of coupling between the magnetic field B and the spins $\sigma$, which results in the phase modulation of the particles in the system or the spin-dependent magnetic field $B_{\sigma}$. We have constructed the wave strings attached to the particles, for each given periodic interval of the phases, governed by spins. We have calculated the electronic band structure of the AA-bilayer, in the presence of transverse magnetic field and we have found the Metal-Semiconductor-Insulator transition in the AA-bilayer graphene, governed by the strength of applied magnetic field. The spins in our problem are considered as localized along the direction of applied field or opposite to it. The transition into Dirac’s spectrum of usual graphene is also discussed at certain band structure parameters regimes.
About Author :
Dr Vardan Apinyan works at the Institute of Low Temperature and Structure Research (ILTSR), in the group of Condensed Matter Theory. He has completed his PhD studies at the International Max Planck Research School in Dresden-Wrocław in November 2010, and he was displaced definitively to Wrocław, in December 2011. Now, he is working on many subjects in condensed matter physics like electron transport in graphene-based heterostructures, excitonic physics in graphene heterostructures, mathematical aspects in the physics of graphene. He is elaborating new theoretical methods to describe the electronic correlations and band structures in graphene-based heterojunctions. Dr Vardan Apinyan described the possibility of the passage from the metallic state into the insulator state in the AA stacked bilayer graphene structure.
